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Our technology efforts date back over a decade and have matured as the semiconductor industry has, and leveraged advancements in technology to improve MxRAM and to maintain compatibility with modern foundries.
The origins of MxRAM were inspired from Magnetic Tape memory, which retains data for VERY long times. As in an audio cassette, magnetic tape encoded data is scanned across a read write head. As in a hard drive, the recorded area needs to pass over a read head to retrieve the data, Thanks to modern semiconductor technology we were able to design MxRAM such that every bit of information has its own dedicated read / write “head” and can access any of the information instantly, Random Access Memory (RAM).
MxRAM has several patents surrounding the core technology, fabrication methods, and general functionality of the NVM. Specifically including a tri-state patent, which as the name implies, allows the memory cell to hold one of three states, allowing for 50% more data per bit!
Since 2014, MxRAM has worked with world class scientist at Sandia National Labs to explore the capabilities of the technology, improve manufacturability, efficiency and storage density. Ongoing efforts are aligned with SNL’s strategic partner program, and remain a technical focus of their lab.
NASA
THE DEPARTMENT OF DEFENSE
THE UNITED STATES AIR FORCE
ADVANCED PHOTON SCIENCES, LLC
MxRAM is positioned to move quickly and is able to penetrate a number of high tech markets on a world wide stage. Incorporated in New Mexico’s legendary silicon arena, and sharing ties to Vermont and the industries very foundation in semiconductor, MxRAM is a futuristic memory for the growing needs of the modern digital age.